Disruptive Technology: ROHM Generation 4 SiC MOSFET

ROHM’s 4th Generation SiC MOSFET: Lowest ON Resistance

New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance

 

ROHM is one of the leading power semiconductor device manufacturers, and the release of their 4th generation silicon carbide (SiC) MOSFET has been highly anticipated.

With the MOSFET in our lab, we were astonished to find the deepest source trench we have ever encountered in a SiC device. By our estimates, ROHM has managed to create a trench almost 2x deeper than any we have seen in SiC previously.

Etching trenches is notoriously tricky in SiC. In this device, the p-type doping around the source-trench creates additional shielding to the gate oxide from a high field (improves reliability) and enables the dense cell packing (reduction of pitch).

Rohm claims to have achieved a 50% reduction in switching loss over their previous generation by significantly reducing parasitic capacitance. The improved trench structure helps to deliver the industry’s lowest specific ON resistance.

ROHM Generation 4 SiC MOSFET

Figure 1: ROHM’s 4th Generation SiC MOSFET

The following is a high-level summary of our findings:

  • New 4th Generation SiC MOSFETs featuring the industry’s lowest ON Resistance
    • Rohm SCT4045DEC11 Gen4 750 V 45 mΩ
    • Lowest specific on-resistance (RDS(ON)*A) in the market to date
  • High anisotropy source trench with an aspect ratio of ~2.5:1
  • P-type implantation around the entire source trench region
  • Reduction in cell pitch by a factor of 3 from the previous generation

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ROHM’s 4th Generation SiC MOSFET

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Download the product brief for more details, and for a high-resolution image showing the trench structure with annotations.